ssf 60 07 ? silikron semiconductor co.,ltd. 201 4 .0 2 . 10 v ersion : 1. 1 page 1 of 6 www.silikron.com main product characteristics: features and benefits: description : absolute max rating: symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ - 10v - 130 m a i d @ tc = 100c continuous drain current, v gs @ - 10v - 100 i dm pulsed drain current - 520 p d @tc = 25c power dissipation 2 3 0 m w v ds drain - source voltage - 5 0 v v gs gate - to - source voltage 20 v esd esd rating (hbm module) 1 kv t j t stg operating junction and storage temperature range - 55 to + 1 50 c thermal resistance symbol characterizes typ. max. units r ja junction - to - ambient ( t 10s) 556 /w junction - to - ambient (pcb mounted, steady - state) 540 /w v dss - 5 0 v r ds (on) 2.1 ohm(typ.) i d - 130ma sot - 23 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for line current interrupter in telephone sets, relay, high speed and line transformer drivers and general purpose ap plications ? ultra low on - resistance with low gate charge ? fast switching and reverse body recovery ? 1 50 operating temperature it utilizes the latest processing techniques to ach ieve the high cell density and reduces the on - resistance . these features co mbine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications 6007 6007
ssf 60 07 ? silikron semiconductor co.,ltd . 201 4 .0 2 . 10 version : 1. 1 page 2 of 6 www.silikron.com electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v (br)dss drain - to - source breakdown voltage - 50 v v gs = 0v, id = - 1 0a r ds(on) static drain - to - source on - resistance 2.1 7 v gs = - 10v,i d = - 130m a v gs(th) gate threshold voltage - 0.8 - 2 v v ds = v gs , i d = - 1m a i dss drain - to - source leakage current - 0.1 a v ds = - 4 0 v,v gs = 0v - 1 v ds = - 50 v,v gs = 0v - 5 0 t j = 125 c i gss gate - to - source forward leakage 1 0 u a v gs = 20 v - 10 v gs = - 20 v gfs forward transconductance 50 s v ds = - 2 5 v i d = - 130m a c iss i nput c apacitance 45 pf v gs = 0; v ds = - 5 v; f = 1 mhz c oss o utpu t c apacitance 18 c rss r everse t ransfer c apacitance 11 t d(on) turn C on delay time 3.1 ns vdd = C 15v ; id = C 2.5 a ; rl = 50 ohm t r rise time 1.3 t d(off) turn C off delay time 18 t f fall time 7.5 source - drain ratings and ch aracteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 130 m a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 520 m a v sd diode forward voltage - 1.3 v i s = - 130m a, v gs =0v n otes : calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the value of r j a is measured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ssf 60 07 ? silikron semiconductor co.,ltd . 201 4 .0 2 . 10 version : 1. 1 page 3 of 6 www.silikron.com fig 1: transfer characteristics fig 2 : outp ut curve fig 3 : body diod e forward curve fig 4 : switching test circuit fig 5 : switching waveforms i d , drain current ( amp s ) v d s, drain - to - source voltage( volts ) v sd , d iode forwa r d voltage( volts ) i d , d iode current ( amp s ) v g , gate - to - source voltage( volts ) i d , drain current ( amp s ) v g s r g e n v in g v d d rl v o u t s d v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off ) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off ) t f 90%
ssf 60 07 ? silikron semiconductor co.,ltd . 201 4 .0 2 . 10 version : 1. 1 page 4 of 6 www.silikron.com sot - 23 package information dimensions in millimeters (unit:mm) notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non - lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. symbol dimensions in millimeters min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.30 0 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8
ssf 60 07 ? silikron semiconductor co.,ltd . 201 4 .0 2 . 10 version : 1. 1 page 5 of 6 www.silikron.com ordering and marking information device marking: 60 07 package (available) sot - 23 operating temperature range c : - 55 to 1 50 oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box sot23 3000pcs 10pcs 30000pcs 4pcs 120000pcs reliability test program test item conditions duration sample size high temperatur e reverse bias(htrb) t j = 1 50 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j = 1 50 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 60 07 ? silikron semiconductor co.,ltd . 201 4 .0 2 . 10 version : 1. 1 page 6 of 6 www.silikron.com attention: any and all s ilikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be r easonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accident s or events t hat could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or tran smitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (incl uding circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringem ents of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delive ry specification" for the silikron product that you intend to use. customer service worldwide sales and service : sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. building 11a suchun industrial square, 428# xinglong street, suzhou p.r. chin a tel: (86 - 512) 62560688 fax: (86 - 512) 65160705 e - mail: sales@silikron.com
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